BFR92ARGELB NPN三极管 20V 30mA 6Ghz 65~150 SOT-23/SC-59 marking/标记 P5 宽频带放大器
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 30mA |
截止频率fTTranstion Frequency(fT) | 6Ghz |
直流电流增益hFEDC Current Gain(hFE) | 65~150 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 200mW/0.2W |
Description & Applications | Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Wide band amplifier up to GHz range. |
描述与应用 | 硅NPN平面RF晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •无铅(Pb)组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 宽频带放大器高达GHz范围内。 |
规格书PDF |