BSP316 P沟道MOS场效应管 -100V 650mA 1.4ohm SOT-223 marking/标记 BSP316
| 最大源漏极电压VdsDrain-Source Voltage | -100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -100V |
| 最大漏极电流IdDrain Current | -0.65A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.4Ω @-650mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2V |
| 耗散功率PdPower Dissipation | 1.8W |
| Description & Applications | • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V |
| 描述与应用 | •P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8-2.0 V |
| 规格书PDF |
