BSP316 P沟道MOS场效应管 -100V 650mA 1.4ohm SOT-223 marking/标记 BSP316
最大源漏极电压VdsDrain-Source Voltage | -100V |
最大栅源极电压Vgs(±)Gate-Source Voltage | -100V |
最大漏极电流IdDrain Current | -0.65A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 1.4Ω @-650mA,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.8--2V |
耗散功率PdPower Dissipation | 1.8W |
Description & Applications | • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V |
描述与应用 | •P沟道 •增强模式 •逻辑电平 •VGS(TH)=-0.8-2.0 V |
规格书PDF |