BST120 P沟道MOS场效应管 -60V -300mA 6ohm SOT-89 marking/标记 LM 高速开关 无二次击穿
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 6Ω @-200mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR very low Ron direct interface to C-MOS high-speed switching no second breakdown |
| 描述与应用 | P-沟道增强型垂直D-MOS晶体管 非常低罗恩 C-MOS直接接口 高速开关 无二次击穿 |
| 规格书PDF |
