CMPT3019TR NPN三极管 120V 500mA/0.5A 100MHz 100~300 500mV/0.5V SOT-23/SC-59 marking/标记 C3A 通用放大器
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications. |
| 描述与应用 | NPN硅晶体管 中央的半导体CMPT3019类型是NPN硅晶体管 由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，非常高的电流，通用放大器应用设计的。 |
| 规格书PDF |
