CMT2N7002 N沟道MOSFET 60V 115mA/0.115A SOT-23/SC-59 marking/标记 024V 密度电池设计极低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 75Ω/Ohm 50mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability |
| 描述与应用 | 高密度电池设计低RDS（ON） 电压控制小信号开关 坚固可靠 高饱和电流能力 |
| 规格书PDF |
