CPH3410 N沟道MOSFET 20V 2.5A SOT-23/SC-59 marking/标记 KK 耗尽模式/高动态性
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 2.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.105Ω/Ohm 21.2A,4v |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1.3V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | N- Channel Silicon MOS FET Very High-Speed Switching Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. |
| 描述与应用 | N沟道硅MOS FET 非常高速开关应用 •低通态电阻。 •高速开关。 •2.5V驱动 |
| 规格书PDF |
