NTMD2P01R2 P沟道MOS场效应管 -16V -2.3A 150毫欧 Vth:-0.5~-1.5V 8脚 marking/标记 D2P01 功率MOSFET 低导通电阻 便携式设备应用
| 最大源漏极电压VdsDrain-Source Voltage | -16V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -10V |
| 最大漏极电流IdDrain Current | -2.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 150mΩ@ VGS = -2.5V, ID = -1.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5~-1.5V |
| 耗散功率PdPower Dissipation | 710mW/0.71W |
| Description & Applications | Power MOSFET Dual SOIC−8 Package Features • High Efficiency Components in a Single SOIC−8 Package • High Density Power MOSFET with Low RDS(on) • Logic Level Gate Drive • SOIC−8 Surface Mount Package,Mounting Information for SOIC−8 Package Provided • Pb−Free Packages are Available Applications • Power Management in Portable and Battery−Powered Products, i.e.:Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones |
| 描述与应用 | 功率MOSFET 双SOIC-8封装 特点 •在一个单一的SOIC-8封装的高效率组件 •高密度的功率MOSFET具有低RDS（ON） •逻辑电平栅极驱动器 •SOIC-8表面贴装封装，安装SOIC-8封装提供的信息 •无铅包可用 应用 •电源管理在便携式和电池供电产品，如：电脑，打印机，PCMCIA卡，蜂窝电话和无绳电话 |
| 规格书PDF |
