EC4304C P沟道MOS场效应管 -30V -250mA 1.5ohm Vth:-0.4--1.4V ECSP1008-4 marking/标记 V 高速开关 2.5V驱动 ESD保护
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -0.25A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.5Ω @-120mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.4V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | • Low ON-resistance. • High-speed switching. • 2.5V drive. • High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source]. |
| 描述与应用 | •低导通电阻。 •高速开关。 •2.5V驱动。 •高抗ESD损害（典型值300V）保护二极管之间连接的栅极和源] |
| 规格书PDF |
