ECH8302-TL-E P沟道MOS场效应管 -30V -7A 48毫欧 Vth:-1~-2.4V ECH8 marking/标记 JB 低导通电阻 通用开关 4V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 48mΩ@ VGS = -4V, ID = -2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1~-2.4V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. |
| 描述与应用 | P-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •4V驱动器。 |
| 规格书PDF |
