EMD6 NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA 100~600 150mW/120mW SOT-563/EMT6 标记D6 开关电路 逆变器 接口电路 驱动电路
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 150mW/120mW |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA143T的EMT或UMT或SMT封装的芯片和DTC143T芯片。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
| 规格书PDF |
