F5018-S-TB16R N沟道MOSFET TO-252/D-PAK marking/标记 F5018 低导通电阻/高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 40V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -0.3V~7V |
| 最大漏极电流Id Drain Current | 8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 140mΩ ID=5A VGS=5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0V~2.8V |
| 耗散功率Pd Power Dissipation | 15W |
| Description & Applications | |
| 描述与应用 |
| 规格书PDF |
