FDC5612 N沟道MOSFET 60V 4.3A SOT-163/SOT23-6 marking/标记 562 无二次击穿/高速开关/高输入阻抗
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 64mΩ@ VGS = 6V, ID =4A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2~4V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | 60V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency Applications • DC/DC converte Features • High performance trench technology for extremely low RDS(ON) • Low gate charg • Fast switching speed |
| 描述与应用 | 60V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。 这些MOSFET具有更快的开关和更低的栅极电荷比其他的MOSFET相媲美的RDS（ON）规格。 其结果是一个MOSFET，很容易和更安全的驾驶（即使在非常高的频率），和DC / DC电源设计中具有较高的整体效率 应用 •DC/ DC转换器具 特点 •高性能沟道技术极低的RDS（ON） •低栅极临时代办 •开关速度快 |
| 规格书PDF |
