FDC637AN N沟道MOSFET 20V 6.2A SOT-163/SOT23-6 marking/标记 637 无二次击穿/高速开关/高输入阻抗
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 6.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 32mΩ@ VGS = 2.5V, ID =5.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.5V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | Single N-Channel, 2.5V Specified Power Trench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Applications • DC/DC converter • Load switch • Battery Protection Features • Fast switching speed. • Low gate charge. • High performance trench technology for extremely low RDS(ON) • Super SOT TM-6 package |
| 描述与应用 | 单N沟道，2.5V额定功率沟槽MOSFET 概述 此N沟道2.5V指定的MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 这些设备已设计提供特殊功耗在一个非常小的空间，更大的SO-8和TSSOP-8封装相比。 应用 •DC/ DC转换器 •负荷开关 •电池保护 特点 •快速开关速度。 •低栅极电荷。 •高性能沟道技术极低的RDS（ON） •超级SOT TM-6封装 |
| 规格书PDF |
