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FDD2570 N沟道MOSFET 150V 4.7A TO-252/D-PAK marking/标记 2570 低导通电阻/超高速开关/2.5V驱动器

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最大源漏极电压Vds Drain-Source Voltage150V
最大栅源极电压Vgs(±) Gate-Source Voltage20v
最大漏极电流Id Drain Current4.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.08Ω/Ohm @4.7A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation7W
Description & Applications150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC • 4.7 A, 150 V. DS(ON)= 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
描述与应用150V N-沟道PowerTrench MOSFET 概述 这N沟道MOSFET的设计 专门用于提高整体效率的DC / DC 转换器采用同步或常规 开关PWM控制器。 这些MOSFET具有更快的开关和更低 比其他具有可比性的MOSFET栅极电荷 RDS(ON)规格。 其结果是一个MOSFET,很容易和更安全的驾驶 (即使在非常高的频率),和DC / DC •低栅极电荷 •开关速度快 •高性能沟道技术极 低RDS(ON) •高功率和电流处理能力
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