FDG6301N 复合场效应管 25V 220mA/0.22A SOT-363/SC70-6 marking/标记 01Y 双N沟道 数字FET
| 最大源漏极电压VdsDrain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | 220mA/0.22A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 5Ω@ VGS = 2.7V, ID =190mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.65~1.5V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits . Compact industry standard SC70-6 surface mount package. |
| 描述与应用 | 双N沟道，数字FET 概述 这些双N沟道逻辑电平增强模式场效应晶体管都采用飞兆半导体专有的，高细胞密度，DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计，尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路。 紧凑型工业标准SC70-6表面贴装封装。 |
| 规格书PDF |
