FDZ298N N沟道MOSFET 20V 6A BGA marking/标记 低漏源导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 39mΩ@ VGS = 2.5V, ID =5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率Pd Power Dissipation | 1.7W |
| Description & Applications | N-Channel 2.5 V Specified Power Trench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Applications · Battery management · Battery protection Features · Ultra-thin package · Outstanding thermal transfer characteristics · Ultra-low Qg x RDS(ON) figure-of-merit · High power and current handling capability. |
| 描述与应用 | N沟道2.5 V额定功率沟槽BGA MOSFET 概述 结合飞兆半导体先进的2.5V功率沟槽进程与国家最先进的BGA封装，的FDZ298N最大限度地减少电路板空间和RDS（ON）。这BGA MOSFET体现了包装技术的突破使设备结合优异的热传递特性，高电流处理能力，超低扁平封装，低栅极电荷和低RDS（ON）。 应用 ·电池管理 ·电池保护 特点 ·超薄封装 ·杰出的热传递的特点 ·超低QG x RDS（ON）图的优点 ·高功率和电流处理能力。 |
| 规格书PDF |
