FKV660S N沟道MOSFET 6A TO-263 marking/标记 FKV660S 低栅极电荷/高速开关/极低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 60V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.014Ω/Ohm 2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5V |
| 耗散功率Pd Power Dissipation | 6W |
| Description & Applications | |
| 描述与应用 |
| 规格书PDF |
