FMG5 NPN+NPN复合带阻尼三极管 50V 100mA 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 标记G5 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA |
Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
直流电流增益hFE DC Current Gain(hFE) | |
截止频率fT Transtion Frequency(fT) | 250MHz |
耗散功率Pc Power Dissipation | 300mW/0.3W |
Description & Applications | Features •Emitter common(dual digital transistors) •Two DTC114Y chips in a EMT or UMT or SMT package. |
描述与应用 | 特点 •发射极普通的(双数字晶体管) •两个DTC114Y的在EMT或UMT或SMT封装的芯片 |
规格书PDF |