FMQ2 NPN+PNP复合带阻尼三极管 40V/-40V 30mA/-500mA 270/120 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 标记Q2 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V/-40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V/-30V |
集电极连续输出电流IC Collector Current(IC) | 30mA/-500mA |
Q1基极输入电阻R1 Input Resistance(R1) | 100KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 100KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 200KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 100KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 2 |
直流电流增益hFE DC Current Gain(hFE) | 270/120 |
截止频率fT Transtion Frequency(fT) | 250MHz/200MHz |
耗散功率Pc Power Dissipation | 300mW/0.3W |
Description & Applications | Features •Power management (dual digital transistors) •Two digital transistors in a SMT package. •up to 500mA can be driven •low Vce(sat) of driven transistors for low power dissipation |
描述与应用 | 特点 •电源管理(双数字晶体管) •两个数字晶体管在SMT包装。 •高达500mA的电流可以驱动 •低Vce(sat)的驱动晶体管以实现低功耗 |
规格书PDF |