GN1010-R MESFET-N沟道 6V 25mA-45mA SOT-143 marking/标记 5AR 高频应用/低噪音
| 最大源漏极电压VdsDrain-Source Voltage | 6V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 25mA-45mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | GaAs N-Channel MES For high-output high-gain amplification General-use wide-band amplifier Low noise With bandwidth control pin |
| 描述与应用 | 砷化镓N沟道MES 用于高输出的高增益放大 一般使用的宽带放大器 低噪音 随着带宽控制引脚 |
| 规格书PDF |
