IRF5810TR 复合场效应管 -20V -2.9A SOT-163/SOT23-6 marking/标记 K6 超低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -2.9A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 135mΩ@ VGS = -2.5V, ID = -2.3A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45~-1.2V |
| 耗散功率PdPower Dissipation | 960mW/0.96W |
| Description & Applications | Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 双P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |
| 规格书PDF |
