IRFR420B N沟道MOSFET 600V 2.3A TO-252/D-PAK marking/标记 IRFR420 优秀的电压特性/出色的瞬态特性
| 最大源漏极电压Vds Drain-Source Voltage | 600V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 2.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.6Ω/Ohm @1150mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well uited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. • 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V • Low gate charge ( typical 14 nC) • Low Crss ( typical 10 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability |
| 描述与应用 | 500V N沟道MOSFET 概述 这些N沟道增强型功率场效应 晶体管都采用飞兆半导体专有的，平面的，DMOS技术。 这种先进的技术，特别是针对已尽量减少对通态电阻，提供出色的开关性能，并承受高能量脉冲在雪崩和减刑模式。 这些器件非常高效率开关模式电源，uited 基于半桥功率因数校正和电子镇流器 •低栅极电荷（典型14 nC） •低Crss（典型10 pF） •快速开关 •100％雪崩测试 •改进的dv / dt能力 |
| 规格书PDF |
