IRLML6402TR P沟道MOS场效应管 -3.7A 0.065ohm SOT-23 marking/标记 EC/E4/E1/EB/E7/E3 超低导通电阻 薄型封装
| 最大源漏极电压VdsDrain-Source Voltage | |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -3.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.065Ω @-3.7A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.40--0.95V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching |
| 描述与应用 | 超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴 快速切换 |
| 规格书PDF |
