ISL9N306AD3ST N沟道MOSFET 30V 5A TO-252/D-PAK marking/标记 N306AD 仿真模型/仿真模型
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0052Ω/Ohm @250A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 125W |
| Description & Applications | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • Fast switching |
| 描述与应用 | N沟道逻辑电平PWM优化UltraFET®沟槽功率MOSFET 30V，50A，6MΩ 概述 该设备采用了新的先进的沟槽MOSFET 的技术和功能，同时保持低的导通电阻低栅极电荷。 为开关应用进行了优化，该设备提高 DC/ DC转换器的整体效率，并允许以较高的开关频率的操作。 快速切换 |
| 规格书PDF |
