MCH3412 N沟道MOSFET 30V 3A S0T-323/MCPH3 marking/标记 KM 超低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.084Ω/Ohm @1.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2.6V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 •低导通电阻。 •超高速开关。 •4V驱动器 |
| 规格书PDF |
