MGF1902B MESFET-N沟道 -6V 30mA-100mA -0.3V -- -3.5V GD-16 marking/标记 GJ 高频应用/低噪音
| 最大源漏极电压VdsDrain-Source Voltage | -6V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 30mA-100mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.3V -- -3.5V |
| 耗散功率PdPower Dissipation | 360mW/0.36W |
| Description & Applications | Type carrier low noise GaAs FET S to X band low noise amplifiers and oscillators Low noise figure High associated gain |
| 描述与应用 | 载波低噪声砷化镓 场效应管类型 S到X波段低噪声放大器和振荡器 低噪声系数 高相关增益 |
| 规格书PDF |
