MGSF3441VT1 P沟道MOS场效应管 20V 300mA/0.3A 0.078ohm SOT-163 marking/标记 PT T-MOS单P沟道
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -0.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.078 @-3A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.45V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | low Rds small-signal MOSFETs TMOS single P-CHANNEL field effect transistors Low Rds provides higher efficienccy and extends battery life miniature TSOPE6 surface mount package saves board space |
| 描述与应用 | 低Rds小信号MOSFET TMOS单P沟道 场效应晶体管 低RDS提供了更高的的efficienccy，并延长电池寿命 TSOPE6微型表面贴装封装，节省了电路板空间 |
| 规格书PDF |
