MIC94053YC6TR P沟道MOS场效应管 -6V 2A 0.07ohm SOT-363 marking/标记 P53 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -6V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -6V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.07 @-100mA,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.2V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Features • 0.125Ω typical on-resistance at 4.5V gate-to-source voltage • Operates with 1.8V gate-to-source voltage • Separate substrate connection allows reverse-blocking |
| 描述与应用 | •0.125Ω的导通电阻的典型 在4.5V栅极至源极电压 •使用1.8V的栅 - 源电压 •独立的基板连接允许反向阻断 |
| 规格书PDF |
