MMBF170LT1 N沟道MOSFET 60V 500mA/0.5A SOT-23/SC-59 marking/标记 6Z 高速开关/低导通电阻/低电压驱动
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm @200mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-3.0V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features •AEC Q101 Qualified − MVBF170LT1 •These Devices are Pb−Free and are RoHS Compliant |
| 描述与应用 | 功率MOSFET 500毫安，60 V N沟道SOT-23 AEC Q101标准 - MVBF170LT1 •这些器件是无铅，符合RoHS标准 |
| 规格书PDF |
