MMBF5460LT1 N沟道结型场效应管 40v 1~5mA SOT-23 marking/标记 M6E 高阻抗信号源
| 最大源漏极电压VdsDrain-Source Voltage | 40v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -40v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 1~5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.75~-6v |
| 耗散功率PdPower Dissipation | 225mW/0.225W |
| Description & Applications | P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. |
| 描述与应用 | P-通道通用放大器 此设备的设计主要是低层次的音频和一般 高阻抗信号源的用途。 |
| 规格书PDF |
