SMBT3904 NPN三极管 60V 200mA/0.2A 300MHz 100~300 300mV/0.3V SOT-23/SC-59 marking/标记 1A 开关晶体管
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
截止频率fTTranstion Frequency(fT) | 300MHz |
直流电流增益hFEDC Current Gain(hFE) | 100~300 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率PcPower Dissipation | 330mW/0.33W |
Description & Applications | Features • NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT3906 (PNP) |
描述与应用 | 特点 •NPN型硅开关晶体管 •高直流电流增益:0.1mA至100mA的 •低集电极 - 发射极饱和电压 •互补型:SMBT3906(PNP) |
规格书PDF |