MMBT5551LT NPN三极管 180V 600mA/0.6a 20~250 150mV~250mV SOT-23/SC-59 marking/标记 G1 高电压晶体管
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 20~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV~250mV |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistors NPN Silicon • Pb−Free Packages are Available |
| 描述与应用 | 高电压晶体管 NPN硅 无铅包可用 |
| 规格书PDF |
