MSB709-RT1G PNP三极管 -60V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-23/SC-59 marking/标记 AR 放大器
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
截止频率fTTranstion Frequency(fT) | |
直流电流增益hFEDC Current Gain(hFE) | 210~340 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available |
描述与应用 | PNP硅通用晶体管放大器 特点 无铅包装是可用 |
规格书PDF |