NE34018 N沟道MOSFET 4V 30mA TO-252/D-PAK marking/标记 V64 DC-DC转换器/低RDS/延长电池寿命
| 最大源漏极电压Vds Drain-Source Voltage | 4V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 3V |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.2--2V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE34018 is a n-channel HJ-FET housed in MOLD package. Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz Gate width: Wg = 400 Pm 4 pins super mini mold Tape & reel packaging only available |
| 描述与应用 | L到S波段低噪声放大器 N沟道HJ-FET NE34018是n沟道HJ-FET坐落在模具包。 低噪声系数 NF=0.6 dB典型值。在f =2吉赫 高相关的收益 GA =16 dB（典型值）在f =2吉赫 门宽度：WG =400分 4引脚超小型模具 唯一可用的磁带和卷轴包装 |
| 规格书PDF |
