集成电路IC 与非门 SN74LVC2G00DCUR VFSOP8/US8 marking/标记 C00
逻辑类型Logic Type | 与非门 NAND Gate |
电路数Number of Circuits | 2 |
输入数Number of Inputs | 2 |
电源电压VccVoltage - Supply | 1.65V~5.5V |
静态电流IqCurrent - Quiescent (Max) | 10uA |
输出高,低电平电流Current - Output High, Low | -32mA,32mA |
低逻辑电平Logic Level - Low | 0.1V~0.55V |
高逻辑电平Logic Level - High | 1.2V~3.8V |
传播延迟时间@Vcc,CLMax Propagation Delay @ V, Max CL | |
Description & Applications | Features DUAL 2-INPUT POSITIVE-NAND GATE Available in the Texas Instruments NanoFree™ Package >2 V at VCC Typical VOHV(Output VOH Undershoot)= 3.3 V, TA= 25°C Supports 5-V VCC Operation Ioff Supports Partial-Power-Down Mode Inputs Accept Voltages to 5.5 V Operation Latch-Up Performance Exceeds 100 mA Per Max tpd of 4.3 ns at 3.3 V JESD 78, Class II Low Power Consumption, 10-µA Max ICC ESD Protection Exceeds JESD 22 ±24-mA Output Drive at 3.3 V– 2000-V Human-Body Model (A114-A) Typical VOLP(Output Ground Bounce)<0.8 V at V – 1000-V Charged-Device Model (C101)CC= 3.3 V, TA= 25°C |
描述与应用 | 特性 双2输入正与非门 可在德州仪器NanoFree™封装>2 V在VCC :典型的VOHV(输出VOH冲的)=3.3 V,TA= 25°C 支持5-V VCC运作 IOFF支持部分掉电模式 接受输入电压5.5 V运作 闭锁性能超过100 mA每 在3.3 V JESD 78,II级,最大吨为4.3 ns 低功耗,10μA最大ICC ESD保护超过JESD22 ±24 mA输出驱动在3.3 V-2000-V人体模型(A114-A) 典型的VoIP(输出地弹跳)<0.8 V,V - 1000-V带电器件模型(C101)CC = 3.3 V,TA= 25°C |
规格书PDF |