NTGS3441T1 P沟道MOS场效应管 -20V -1.65A 135毫欧 SOT-163 marking/标记 PT 低导通电阻 高效率延长电池寿命
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -1.65A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 135mΩ@ VGS = -2.5V, ID = -2.9A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45~-1.5V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | Power MOSFET Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP−6 Surface Mount Package • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards |
| 描述与应用 | 功率MOSFET 特点 •超低RDS（上） •更高的效率延长电池寿命 •微型TSOP-6表面贴装封装 •无铅包装是可用 应用 •电源管理在便携式和电池供电产品，即：蜂窝，无绳电话，PCMCIA卡 |
| 规格书PDF |
