NTS4001NT1G N沟道MOSFET 30V 270mA/0.27A SOT-323/SC-70 marking/标记 TD 小功率损耗
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 270mA/0.27A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.5Ω/Ohm @10A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 330mW/0.33W |
| Description & Applications | • Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • Pb−Free Package for Green Manufacturing (G Suffix) |
| 描述与应用 | •低栅极电荷快速开关 •占地面积小 - 30％小于TSOP-6 •ESD保护门 •面向绿色制造的无铅封装（G后缀） |
| 规格书PDF |
