P45N02LD N沟道MOSFET 20V 45A TO-252/D-PAK marking/标记 P45N02LD 硅栅高速开关/低驱动
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 45A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.022Ω/Ohm @5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 90W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. 45A, 20V RDS(ON) = 0.022Ω Temperature compensating PSPICE model Be driven directly from CMOS, NMOS, and TTL circuits Peak current vs. pulse width curve |
| 描述与应用 | N沟道 增强模式 说明 由于N沟道功率MOSFET是专为UTP45N02 使用中的应用，如开关稳压器，开关 转换器，电机驱动器和继电器驱动器。 温度补偿的PSPICE型 直接驱动CMOS，NMOS，和TTL电路 峰值电流与脉冲宽度曲线 |
| 规格书PDF |
