PBSS5140U PNP三极管 -40V -1A 150MHz 300~800 -500mV/-0.5V SOT-323/SC-70 marking/标记 51t LCD背光/电池驱动
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流ICCollector Current(IC) | -1A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 300~800 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率PcPoWer Dissipation | 350mW/0.35W |
Description & Applications | 40 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). |
描述与应用 | 40伏的低VCE(sat)的PNP晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性,由于产生的热量减少 •增强的性能超过SOT231A标准包装的晶体管。 应用 •通用开关和静音 •LCD背照明 •供电线路开关电路 •电池驱动设备(手机,摄像机和手持设备)。 |
规格书PDF |