PMV65XP P沟道MOS场效应管 -20V -4.3A 0.065ohm SOT-23 marking/标记 WM9 低开启电压 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -4.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.065Ω @-1A,-4.7V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.47--0.9 |
| 耗散功率PdPower Dissipation | 480mW/0.48W |
| Description & Applications | 20 V, single P-channel Trench MOSFET Low threshold voltage Low on-state resistance Trench MOSFET technology |
| 描述与应用 | 20 V，单P沟道沟道MOSFET 低阈值电压 低通态电阻 沟道MOSFET技术 |
| 规格书PDF |
