RSU002P03F P沟道MOS场效应管 -30V 250mA 0.9ohm SOT-323 marking/标记 WP 低导通电阻 4V驱动
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -0.25A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω @-250mA,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0--2.5V |
耗散功率PdPower Dissipation | 200mW/0.2W |
Description & Applications | Features Low On-resistance Space saving small surface mount package (TSMT3) 4V drive |
描述与应用 | 低导通电阻 节省空间的小型表面贴装封装(TSMT3) 4V驱动器 |
规格书PDF |