RTM002P02 P沟道MOS场效应管 -20V 200mA 1.0ohm SOT-723 marking/标记 TW 低导通电阻 2.5V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.0Ω @-2A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7--2.0V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Features Low On-resistance. Small package (VMT3). 2.5V drive. |
| 描述与应用 | 低导通电阻。 小型封装（VMT3）。 2.5V驱动器 |
| 规格书PDF |
