S913TR N沟道MOSFET 12V 30mA SOT-143 marking/标记 13R 高速开关/无二次击穿
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 7-10V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Integrated gate protection diodes Low noise figure High gain Biasing network on chip |
| 描述与应用 | 综合栅极保护二极管低噪声系数 高增益 偏置片上网络 |
| 规格书PDF |
