SCH2807 复合场效应管MOSFET+肖特基二极管 20V 1.2A 500mA/0.5A 0.46V SOT-563/SCH6 marking/标记 QG 低导通电阻/超高速开关/反向恢复时间短/低正向电压
| 最大源漏极电压VdsDrain-Source Voltage | N沟道 N-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 15V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 320mΩ@ VGS =10V, ID =600mA |
| 耗散功率PdPower Dissipation | 1.2~2.6V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 15V |
| 规格书PDF |
