SI2341DS P沟道MOS场效应管 -30V -2.8A 0.057ohm SOT-23 marking/标记 F1WOA 功率MOSFET
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -2.8A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.057Ω @-2.8A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0--3.0V |
耗散功率PdPower Dissipation | 900mW/0.9W |
Description & Applications | FEATURES TrenchFET Power MOSFET |
描述与应用 | 功率MOSFET |
规格书PDF |