SI8405DB P沟道MOS场效应管 -12V -4.9A 0.0046ohm Vth:-0.45V-0.95V 2X2 4-MFP marking/标记 8405 功率MOSFET
最大源漏极电压VdsDrain-Source Voltage | -12V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
最大漏极电流IdDrain Current | -4.9A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0046Ω @-1A,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.45V-0.95V |
耗散功率PdPower Dissipation | 2.77W |
Description & Applications | FEATURES TrenchFET Power MOSFET New MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area |
描述与应用 | TrenchFET?功率MOSFET 新的MICRO FOOT?芯片级封装 减少占位面积简介(0.62毫米) 每占位面积导通电阻 |
规格书PDF |