SN7002NL6327 N沟道MOSFET 200mA/0.2A SOT-23/SC-59 marking/标记 SN 低噪声
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @100mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.8V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V |
| 描述与应用 | SIPMOS®小信号晶体管 •N通道 •增强模式 •逻辑电平 •VGS（TH）=0.8 |
| 规格书PDF |
