SP0610TE-6327 N沟道MOS场效应管 100V 1.7A 0.16ohm SOT-23 marking/标记 SSF 小信号晶体管
| 最大源漏极电压VdsDrain-Source Voltage | -100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.16Ω @1.7A,10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 2.1-4V |
| 耗散功率PdPower Dissipation | 1.8W |
| Description & Applications | SIPMOS SMALL-SIGNAL TRANSISTOR N CHANNEL ENHANCEMENT MODE AVALANCHE RATED VGH(th)=2.1-4.0V |
| 描述与应用 | SIPMOS小信号晶体管 N沟道 增强模式 额定雪崩 VGH（th）=2.1-4.0V |
| 规格书PDF |
