SST215 N沟道MOSFET 25V 50mA SOT-143 marking/标记 215 低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 50mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.045Ω/Ohm 210mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.1-1.5VV |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Ultra-High Speed Switching—tON: ns Ultra-Low Reverse Capacitance: 0.2pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode |
| 描述与应用 | 超高速开关吨：1纳秒 超低反向电容：0.2PF 低保证RDS@5 V 低导通阈值电压 N沟道增强模式 |
| 规格书PDF |
