SST215 N沟道MOSFET 25V 50mA SOT-143 marking/标记 215 低导通电阻
最大源漏极电压Vds Drain-Source Voltage | 25V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 50mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.045Ω/Ohm 210mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.1-1.5VV |
耗散功率Pd Power Dissipation | 300mW/0.3W |
Description & Applications | Ultra-High Speed Switching—tON: ns Ultra-Low Reverse Capacitance: 0.2pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode |
描述与应用 | 超高速开关吨:1纳秒 超低反向电容:0.2PF 低保证RDS@5 V 低导通阈值电压 N沟道增强模式 |
规格书PDF |