STN4NE03 N沟道MOSFET 30V 4A SOT-223/SC-73/TO261-4 marking/标记 N4NE03 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION |
| 描述与应用 | 典型的RDS（on）= 0.037Ω 出色的的dv / dt能力 AVALANCHERUGGED技术 100％雪崩测试 面向应用 |
| 规格书PDF |
